DocumentCode
1315505
Title
Damaged depth in GaAs processed by Ar plasma etching
Author
Hidaka, Hideto ; Akita, K. ; Taneya, M. ; Sugimoto, Yoshiki
Author_Institution
Optoelectron. Technol. Res. Lab., Tsukuba, Japan
Volume
26
Issue
15
fYear
1990
fDate
7/19/1990 12:00:00 AM
Firstpage
1112
Lastpage
1113
Abstract
The damaged depths in GaAs processed by Ar plasma etching under various applied radio-frequency (RF) voltages and Ar pressures in a parallel-plate type apparatus were studied. The damaged depth was evaluated in terms of the chemically etched thickness at which the photoluminescence intensity recovers. The damaged depth decreased as the applied radio frequency peak voltage was decreased. The depth was extraordinarily deep in the lower radio frequency voltage region. The effect of Ar pressure on damaged depth was small in the range from 1 to 10 Pa.
Keywords
III-V semiconductors; argon; gallium arsenide; luminescence of inorganic solids; photoluminescence; sputter etching; Ar; GaAs; RF voltages; chemically etched thickness; damaged depths; parallel-plate type apparatus; peak voltage; photoluminescence intensity; plasma etching; radio frequency voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900719
Filename
82889
Link To Document