• DocumentCode
    1315546
  • Title

    Angle resolved X-ray photoemission study of rapid thermal annealing applied to different GaAs and InP samples

  • Author

    Quemerais, A. ; Jezequel, G. ; L´Haridon, H. ; Favennec, P.N. ; Salvi, M.

  • Author_Institution
    Lab. de Spectroscopie du Solide, Rennes Univ., France
  • Volume
    26
  • Issue
    15
  • fYear
    1990
  • fDate
    7/19/1990 12:00:00 AM
  • Firstpage
    1119
  • Lastpage
    1122
  • Abstract
    The crystalline order and stoichiometry of the near surface of GaAs and InP substrates after rapid thermal annealing using a silicon wafer as a protecting cap have been deduced from angle resolved X-ray photo-emission measurements. A monolayer of As or P appears to be enough to prevent further material decomposition. For implanted samples (up to 1014/cm2 Si), the crystalline order is restored after the rapid anneal (without any important stoichiometry modification).
  • Keywords
    III-V semiconductors; X-ray photoelectron spectra; annealing; gallium arsenide; indium compounds; stoichiometry; GaAs; InP; X-ray photoemission study; crystalline order; implanted samples; material decomposition; monolayer; protecting cap; rapid thermal annealing; stoichiometry;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900724
  • Filename
    82894
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1315546