Title :
16-channel parallel optical interconnect demonstration with an InGaAs/InP MQW modulator array
Author :
Barnes, N. ; Healey, P. ; Rejman-Greene, M.A.Z. ; Scott, E.G. ; Webb, R.P.
Author_Institution :
British Telecom Res. Lab., Ipswich, UK
fDate :
7/19/1990 12:00:00 AM
Abstract :
A 4*4 planar array of MQW surface modulators driven by standard high-speed CMOS has been demonstrated in an experimental parallel-interconnect system. Transition times were fast enough for 100 Mbit/s operation and the potential exists to increase array dimensions to include hundreds of devices and transmission rates to many Gbit/s.
Keywords :
CMOS integrated circuits; III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; optical interconnections; optical modulation; semiconductor quantum wells; 100 Mbit/s; MQW modulator array; array dimensions; parallel optical interconnect; planar array; standard high-speed CMOS; surface modulators; transmission rates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900728
