Preliminary reliability studies of 1.55 mu m graded index separate confinement buried heterostructure (GRINSCH) multiple quantum well (MQW) lasers grown by metalorganic vapour phase epitaxy (MOVPE)

Author

Cooper, Diana Marina ; Burness, A.L.

Volume

Issue

fYear

1990

fDate

7/19/1990 12:00:00 AM

Firstpage

1132

Lastpage

1133

Abstract

1.55 mu m graded index separate confinement heterostructure (GRINSCH) multi-quantum-well (MQW) lasers, grown entirely by metalorganic vapour phase epitaxy (MOVPE), have demonstrated low degradation rates in lifetests at 50 degrees C, 4 mW per facet. These lasers are complex structures, containing many interfaces, and the encouraging early lifetest results demonstrate the ability of MOVPE to grow these structures.

Keywords

life testing; optical communication equipment; reliability; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.55 micron; GRINSCH; GRINSCH MQW lasers; graded index; lifetest results; lifetests; low degradation rates; metalorganic vapour phase epitaxy; multiple quantum well; reliability studies; separate confinement buried heterostructure; separate confinement heterostructure;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19900732

Filename

82902

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1315603