Title :
High speed low power GaAs crosspoint switch design
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
7/19/1990 12:00:00 AM
Abstract :
The concept of a ´powered-down´ crosspoint switching cell is implemented in GaAs MESFET technology. The power-switched source-coupled FET logic (PSCFL) switching cell is presented. It is shown how large switching arrays can be constructed in a way that maintains low power consumption and high speed operation.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electronic switching systems; field effect integrated circuits; gallium arsenide; integrated logic circuits; semiconductor switches; GaAs MESFET technology; GaAs crosspoint switch design; PSCFL; crosspoint switching cell; high speed operation; large switching arrays; low power consumption; operation; power-switched source-coupled FET logic; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900739
