• DocumentCode
    1315646
  • Title

    High speed low power GaAs crosspoint switch design

  • Author

    Bagheri, Mehdi

  • Author_Institution
    Bellcore, Red Bank, NJ, USA
  • Volume
    26
  • Issue
    15
  • fYear
    1990
  • fDate
    7/19/1990 12:00:00 AM
  • Firstpage
    1142
  • Lastpage
    1144
  • Abstract
    The concept of a ´powered-down´ crosspoint switching cell is implemented in GaAs MESFET technology. The power-switched source-coupled FET logic (PSCFL) switching cell is presented. It is shown how large switching arrays can be constructed in a way that maintains low power consumption and high speed operation.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; electronic switching systems; field effect integrated circuits; gallium arsenide; integrated logic circuits; semiconductor switches; GaAs MESFET technology; GaAs crosspoint switch design; PSCFL; crosspoint switching cell; high speed operation; large switching arrays; low power consumption; operation; power-switched source-coupled FET logic; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900739
  • Filename
    82909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1315646