Title :
High speed linear array circuit with AlGaAs/GaAs heterojunction bipolar transistors (HBTs)
Author :
Lunardi, L.M. ; Archer, V.D. ; Swartz, R.G. ; Kuo, J.M. ; Kopf, R.F. ; Malik, R.J. ; Smith, P.R.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
7/19/1990 12:00:00 AM
Abstract :
Direct comparison of the performance of a digital divide-by-two implemented in a linear array configuration with an optimised layout version has been made, using AlGaAs/GaAs HBTs in 3.5 mu m emitter width technology with a cutoff frequency of 40 GHz. the customised version operated up to 7.5 GHz input frequency. The linear array circuit operated up to 7.05 GHz.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; cellular arrays; digital integrated circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; 3.5 micron; 40 GHz; 7.5 GHz; AlGaAs-GaAs; HBTs; customised version; cutoff frequency; digital divide-by-two; emitter width; heterojunction bipolar transistors; high-speed linear array circuit; linear array circuit; linear array configuration; optimised layout version;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900748
