Title :
Room temperature negative differential resistance in a triple well rectifying resonant tunnelling diode
Author :
Bolognesi, C.R. ; Mand, R.S. ; Boothroyd, A.R.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
fDate :
7/19/1990 12:00:00 AM
Abstract :
The first room temperature operation of a triple well rectifying resonant tunnelling diode with a high current density of 8600 A/cm2 is demonstrated. These devices exhibit negative differential resistance in the forward direction only, with peak-to-valley current ratios of 1.3 and 4.0 at 300 and 80 K, respectively.
Keywords :
negative resistance; semiconductor quantum wells; tunnel diodes; 300 K; 80 K; forward direction; high current density; negative differential resistance; peak-to-valley current ratios; room temperature operation; triple well rectifying resonant tunnelling diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900752
