Title :
InAlAs/InGaAs/InP junction HEMTs
Author :
Boos, J.B. ; Binari, S.C. ; Kruppa, W. ; Hier, H.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
7/19/1990 12:00:00 AM
Abstract :
A junction high electron mobility transistor (JHEMT) has been demonstrated in the InAlAs/InGaAs/InP material system. Selective Zn diffusion is used to form a shallow p+ gate region within a planar-doped HEMT structure grown by MBE. These devices exhibit an extrinsic DC trans-conductance of 140 mS/mm for a 1.6 mu m gate length and good pinchoff characteristics.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; zinc; 1.6 micron; InAlAs-InGaAs-InP; InGaAs:Zn; InP substrates; JHEMT; MBE; Zn diffusion; characteristics; extrinsic DC trans-conductance; gate length; junction HEMTs; junction high electron mobility transistor; pinchoff characteristics; planar-doped HEMT structure; semiconductors; shallow p + gate region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900758
