DocumentCode :
1315868
Title :
Chemically stabilised ion implanted waveguides in sapphire
Author :
Townsend, Paul D. ; Wood, Robert A. ; Zhang, Leiqi ; McCallum, James ; McHargue, C.W.
Author_Institution :
Sussex Univ., Brighton, UK
Volume :
26
Issue :
15
fYear :
1990
fDate :
7/19/1990 12:00:00 AM
Firstpage :
1193
Lastpage :
1195
Abstract :
Formation of optical waveguides in crystals is extremely attractive for low threshold single mode lasers in materials such as ruby and titanium sapphire. Previous attempts to achieve this using helium ion implantation required unacceptable high ion doses, leading to failure of the surface. The first demonstration of waveguide formation by ion implantation to chemically stabilise defects is reported. Stable waveguides have been prepared using doses as small as 1016 ions/cm2 under optimum implant conditions.
Keywords :
integrated optics; ion implantation; optical waveguides; optical workshop techniques; sapphire; solid lasers; Al 2O 3; ion doses; ion implanted waveguides; low threshold single mode lasers; optimum implant conditions; sapphire; waveguide formation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900772
Filename :
82942
Link To Document :
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