DocumentCode
1315868
Title
Chemically stabilised ion implanted waveguides in sapphire
Author
Townsend, Paul D. ; Wood, Robert A. ; Zhang, Leiqi ; McCallum, James ; McHargue, C.W.
Author_Institution
Sussex Univ., Brighton, UK
Volume
26
Issue
15
fYear
1990
fDate
7/19/1990 12:00:00 AM
Firstpage
1193
Lastpage
1195
Abstract
Formation of optical waveguides in crystals is extremely attractive for low threshold single mode lasers in materials such as ruby and titanium sapphire. Previous attempts to achieve this using helium ion implantation required unacceptable high ion doses, leading to failure of the surface. The first demonstration of waveguide formation by ion implantation to chemically stabilise defects is reported. Stable waveguides have been prepared using doses as small as 1016 ions/cm2 under optimum implant conditions.
Keywords
integrated optics; ion implantation; optical waveguides; optical workshop techniques; sapphire; solid lasers; Al 2O 3; ion doses; ion implanted waveguides; low threshold single mode lasers; optimum implant conditions; sapphire; waveguide formation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900772
Filename
82942
Link To Document