Title :
Monolithically integrated In0.53Ga0.47As/In0.52Al0.48As (on InP) MSM/HFET photoreceiver grown by MBE
Author :
Griem, H.T. ; Fuji, H.S. ; Williams, Trevor J. ; Harrang, J.P. ; Ray, Sambaran ; LaGasse, M.J.
Author_Institution :
Boeing Aerosp. & Electron., Seattle, WA, USA
fDate :
7/19/1990 12:00:00 AM
Abstract :
High speed results on In0.53Ga0.47As/In0.52Al0.48As (on InP) planar doped heterojunction-FETs and 1.3-1.6 mu m wavelength-compatible metal-semiconductor-metal photodetector devices fabricated from a vertically stacked device design with the FET overlaying the detector structure are reported. A cut-off frequency for unity current gain of 30 GHz was achieved with a 1 mu m gatelength. The photodetector at 7 V bias had a photoresponse and dark current of 0.48 A/W and 24 nA, respectively. At 10 V bias the FWHM of the impulse response was 65 ps. A simple near-planar monolithically integrated photoreceiver was successfully fabricated requiring no special processing or regrowth steps.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; molecular beam epitaxial growth; optical communication equipment; photodetectors; 1 micron; 1.3 to 1.6 micron; 10 V; 24 nA; 30 GHz; 7 V; FWHM; III-V semiconductors; In 0.53Ga 0.47As-In 0.52Al 0.48As; InP; MBE; cut-off frequency; dark current; detector structure; impulse response; monolithically integrated; photoreceiver; photoresponse; planar doped heterojunction-FETs; regrowth steps; unity current gain; vertically stacked device design; wavelength-compatible metal-semiconductor-metal photodetector devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900775
