Title :
New distributed package model for the dual gate FET
Author :
Xue, Hongchao ; Howes, M.J. ; Snowden, C.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
fDate :
7/19/1990 12:00:00 AM
Abstract :
A new distributed package model for a dual gate MESFET is presented. This model is based on the physical structure of the device package and describes the package effects accurately. With its simple structure, this model can easily be characterised using S-parameter fitting procedures. It serves as an accurate engineering level model.
Keywords :
S-parameters; field effect transistors; packaging; semiconductor device models; S-parameter fitting procedures; distributed package model; dual gate FET; engineering level model; package effects; physical structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900781
