Title :
Electrohydrodynamic printed TiO2 flexible memory device - fabrication and characterisation
Author :
Rahman, Kaysar ; Mustafa, M. ; Muhammad, N.M. ; Choi, Kwang
Author_Institution :
Dept. of Mechatron. Eng., Jeju Nat. Univ., Jeju, South Korea
Abstract :
Presented is the resistive memory behaviour of a device of Ag/TiO2/Ag structure, patterned on a polyethersulfone flexible substrate fabricated through the electrohydrodynamic patterning method. The fabricated device showed stable resistive bipolar switching behaviour. Performance of the device was also evaluated in bending state and resistance values of high and low resistance states were measured and showed stable behaviour up to a bending radius of 40 mm.
Keywords :
memristors; silver; titanium compounds; Ag-TiO2-Ag; bending state; electrohydrodynamic patterning method; electrohydrodynamic printed flexible memory device; high resistance states; low resistance states; memristors; polyethersulfone flexible substrate; resistance values; resistive bipolar switching behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.1003
