• DocumentCode
    1315993
  • Title

    Electrohydrodynamic printed TiO2 flexible memory device - fabrication and characterisation

  • Author

    Rahman, Kaysar ; Mustafa, M. ; Muhammad, N.M. ; Choi, Kwang

  • Author_Institution
    Dept. of Mechatron. Eng., Jeju Nat. Univ., Jeju, South Korea
  • Volume
    48
  • Issue
    20
  • fYear
    2012
  • Firstpage
    1261
  • Lastpage
    1263
  • Abstract
    Presented is the resistive memory behaviour of a device of Ag/TiO2/Ag structure, patterned on a polyethersulfone flexible substrate fabricated through the electrohydrodynamic patterning method. The fabricated device showed stable resistive bipolar switching behaviour. Performance of the device was also evaluated in bending state and resistance values of high and low resistance states were measured and showed stable behaviour up to a bending radius of 40 mm.
  • Keywords
    memristors; silver; titanium compounds; Ag-TiO2-Ag; bending state; electrohydrodynamic patterning method; electrohydrodynamic printed flexible memory device; high resistance states; low resistance states; memristors; polyethersulfone flexible substrate; resistance values; resistive bipolar switching behaviour;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.1003
  • Filename
    6329558
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1315993