Title :
Coherent operation of monolithically integrated master oscillator amplifiers
Author :
Welch, D.F. ; Mehuys, D. ; Parke, R. ; Waarts, R. ; Scifres, D. ; Streifer, W.
Author_Institution :
Spectra Diode Lab., San Jose, CA, USA
Abstract :
Monolithically integrated master oscillator power amplifiers have been fabricated. The oscillator is a second order distributed Bragg reflector (DBR) laser. The epitaxial layer structure consists of a double quantum well active region bonded by Al0.3Ga0.7As confining layers and Al0.4Ga0.6As cladding layers. The resultant output is a single longitudinal mode in a nearly diffraction limited output to a power level of 485 mW.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; integrated optics; semiconductor junction lasers; 485 mW; AlGaAs-GaAs; cladding layers; coherent operation; confining layers; double quantum well active region; epitaxial layer structure; monolithically integrated master oscillator amplifiers; nearly diffraction limited output; power level; second order DBR laser; single longitudinal mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900856
