• DocumentCode
    1316001
  • Title

    Coherent operation of monolithically integrated master oscillator amplifiers

  • Author

    Welch, D.F. ; Mehuys, D. ; Parke, R. ; Waarts, R. ; Scifres, D. ; Streifer, W.

  • Author_Institution
    Spectra Diode Lab., San Jose, CA, USA
  • Volume
    26
  • Issue
    17
  • fYear
    1990
  • Firstpage
    1327
  • Lastpage
    1329
  • Abstract
    Monolithically integrated master oscillator power amplifiers have been fabricated. The oscillator is a second order distributed Bragg reflector (DBR) laser. The epitaxial layer structure consists of a double quantum well active region bonded by Al0.3Ga0.7As confining layers and Al0.4Ga0.6As cladding layers. The resultant output is a single longitudinal mode in a nearly diffraction limited output to a power level of 485 mW.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; integrated optics; semiconductor junction lasers; 485 mW; AlGaAs-GaAs; cladding layers; coherent operation; confining layers; double quantum well active region; epitaxial layer structure; monolithically integrated master oscillator amplifiers; nearly diffraction limited output; power level; second order DBR laser; single longitudinal mode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900856
  • Filename
    82965
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1316001