• DocumentCode
    1316159
  • Title

    Methane/hydrogen metal organic reactive ion etching of GaInAsP compounds

  • Author

    Keskinen, Jari ; Nappi, J. ; Asonen, H. ; Pessa, M.

  • Author_Institution
    Dept. of Phys., Tampere Univ. of Technol., Finland
  • Volume
    26
  • Issue
    17
  • fYear
    1990
  • Firstpage
    1369
  • Lastpage
    1371
  • Abstract
    A metal organic reactive ion etching (MORIE) process using CH4 and H2 has been applied to GaInAsP semiconductors of various compositions. The etch rates for these compounds are determined for a range of process parameters. MORIE was also applied to etching second-order gratings in GaInAsP.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor technology; sputter etching; GaInAsP; H 2; MORIE; etch rates; metal organic reactive ion etching; methane/hydrogen process; process parameters; second-order gratings;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900880
  • Filename
    82989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1316159