Title :
Methane/hydrogen metal organic reactive ion etching of GaInAsP compounds
Author :
Keskinen, Jari ; Nappi, J. ; Asonen, H. ; Pessa, M.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
Abstract :
A metal organic reactive ion etching (MORIE) process using CH4 and H2 has been applied to GaInAsP semiconductors of various compositions. The etch rates for these compounds are determined for a range of process parameters. MORIE was also applied to etching second-order gratings in GaInAsP.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor technology; sputter etching; GaInAsP; H 2; MORIE; etch rates; metal organic reactive ion etching; methane/hydrogen process; process parameters; second-order gratings;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900880
