Title :
Effect of statistical variation on threshold voltage in narrow-channel MOSFETs
Author :
Li, E.H. ; Liu, C.K. ; Ng, H.C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Surry Univ., Guildford, UK
Abstract :
The first statistical variation analysis in narrow-channel MOSFETs with field oxide isolation structure is presented. The variation of the threshold voltage induced by Gaussian distributed device process parameters such as channel width, doping concentration, interface fixed oxide charges, and gate oxide thickness is investigated by simulation.
Keywords :
MOS integrated circuits; VLSI; insulated gate field effect transistors; integrated circuit technology; semiconductor technology; statistical analysis; Gaussian distributed device process parameters; VLSI; channel width; doping concentration; field oxide isolation structure; gate oxide thickness; interface fixed oxide charges; narrow-channel MOSFETs; scaling; simulation; statistical variation analysis; threshold voltage statistical variation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900893
