Title :
Very low resistivity ohmic contact to p-type GaAs using InxGa1-xAs interlayer
Author :
Janega, P.L. ; Chatenoud, F. ; Wasilewski, Z.
Author_Institution :
Div. of Phys., Nat. Res. Council Canada, Ottawa, Ont., Canada
Abstract :
A very low resistivity ohmic contact to 5*1017 at/cm3 beryllium doped GaAs was obtained by interposing a small bandgap p+InxGa1-xAs layer, grown by molecular beam epitaxy, between the p-GaAs and the metallisation. The thickness of the interlayer was less than 2000 AA. Specific contact resistance as low as 6.4*10-8 Omega cm2 was achieved. These contacts exhibit excellent adhesion, have smooth surfaces and are easy to fabricate.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; metallisation; molecular beam epitaxial growth; ohmic contacts; semiconductor epitaxial layers; semiconductor technology; semiconductor-metal boundaries; 2000 A; adhesion; easy to fabricate; low resistivity ohmic contact; metallisation; molecular beam epitaxy; scaling; semiconductors; small bandgap interlayer; smooth surfaces; specific contact resistance; thickness;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900897
