DocumentCode :
1316317
Title :
Hybrid 11 Gbit/s parallel processing decision circuit using submicron silicon bipolar ICs
Author :
Runge, K. ; Young, James ; Bagheri, Mehdi ; Kipnis, I. ; Snapp, C.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Volume :
26
Issue :
17
fYear :
1990
Firstpage :
1402
Lastpage :
1404
Abstract :
The design and implementation of a submicron-silicon bipolar parallel processing master-slave D-type flip-flop decision circuit, operating at data rates as high as 11 Gbit/s is described. This is the fastest reported decision circuit for silicon bipolar technology. The ICs used in the hybrid circuit were fabricated using a 0.6 mu m, non-polysilicon emitter technology, and mounted in a package employing coplanar waveguides.
Keywords :
bipolar integrated circuits; digital integrated circuits; elemental semiconductors; flip-flops; hybrid integrated circuits; optical communication equipment; 0.6 micron; 11 Gbit/s; SONET; Si circuits; data rates; design; hybrid circuit; implementation; master-slave D-type flip-flop decision circuit; package employing coplanar waveguides; parallel processing decision circuit; semiconductors; submicron bipolar ICs;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900901
Filename :
83010
Link To Document :
بازگشت