DocumentCode
1316337
Title
Driving Current Enhancement of Strained Ge (110) p-Type Tunnel FETs and Anisotropic Effect
Author
Lee, Moon Ho ; Chang, S.T. ; Wu, T.-H. ; Tseng, W.-N.
Author_Institution
Inst. of Electro Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
Volume
32
Issue
10
fYear
2011
Firstpage
1355
Lastpage
1357
Abstract
The experimental investigation carried out the strained Ge (110) p-type tunneling field-effect transistor, and it resulted in the current enhancement of ×2.9 BTBT in the 112 direction, as compared with Si 110/(100) due to a small band gap. In addition, the high on/ off current ratio, with an on current ~1 μA/μm and an off current ~10 pA/μm, and the well control for leakage current without SOI substrate were obtained. The anisotropic effect of tunneling directions for strained Ge on (110) orientation was discussed and explained as due to effective reduced mass.
Keywords
elemental semiconductors; field effect transistors; germanium; leakage currents; Ge; anisotropic effect; driving current enhancement; leakage current; strained Ge (110) p-type tunnel FET; Anisotropic magnetoresistance; Logic gates; Silicon; Silicon germanium; Substrates; Transistors; Tunneling; Effective mass; subthreshold swing; tunneling;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2163379
Filename
6012507
Link To Document