Title :
Reset Statistics of NiO-Based Resistive Switching Memories
Author :
Long, Shibing ; Cagli, Carlo ; Ielmini, Daniele ; Liu, Ming ; Suñé, Jordi
Author_Institution :
Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China
Abstract :
In this letter, we present the characterization and modeling of the reset statistics of Pt/NiO/W resistive random access memories. The experimental observations show that the Weibull slopes of both Vreset and Ireset cumulative distributions increase linearly with 1/Ron. The value of Vreset63% is roughly independent of Ron while Ireset63% increases with 1/Ron. Fully analytical cell-based models based on the thermal dissolution of conductive filament are proposed for the reset switching statistical distributions, which can account for the experimental results with a remarkable agreement.
Keywords :
Weibull distribution; nickel compounds; platinum; random-access storage; resistors; tungsten; Pt-NiO-W; Weibull slope; cell based model; conductive filament; cumulative distributions; reset statistic; reset switching statistical distributions; resistive random access memory; resistive switching memory; Analytical models; Electron devices; Random access memory; Resistance; Shape; Statistical distributions; Switches; Reset statistics; resistive random access memory (RRAM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2163613
