Title :
High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension
Author :
Paques, G. ; Scharnholz, Sigo ; Dheilly, N. ; Planson, D. ; De Doncker, Rik W.
Author_Institution :
French-German Res. Inst. of St. Louis, St. Louis, France
Abstract :
For the first time, a graded etched junction termination extension (JTE) is applied to completed 4H-SiC gate turn-off thyristors. These devices demonstrate the feasibility of nonimplanted high-voltage SiC thyristors. The maximal measured forward breakdown voltage of 7.8 kV corresponds very well to the ideal value of 8.1 kV. This letter explains the conceptual procedure to realize an optimal four-step JTE and compares measurement results with those obtained from finite-element simulations.
Keywords :
semiconductor device breakdown; silicon compounds; thyristors; wide band gap semiconductors; SiC; breakdown voltage; finite element simulation; gate turn-off thyristors; graded etched junction termination extension; high-voltage thyristors; voltage 7.8 kV; voltage 8.1 kV; Anodes; Current measurement; Etching; Logic gates; Silicon carbide; Thyristors; Uncertainty; Gate turn-off (GTO); ion implantation; reactive ion etching; silicon carbide (SiC); termination; thyristor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2163055
