DocumentCode
1316365
Title
High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension
Author
Paques, G. ; Scharnholz, Sigo ; Dheilly, N. ; Planson, D. ; De Doncker, Rik W.
Author_Institution
French-German Res. Inst. of St. Louis, St. Louis, France
Volume
32
Issue
10
fYear
2011
Firstpage
1421
Lastpage
1423
Abstract
For the first time, a graded etched junction termination extension (JTE) is applied to completed 4H-SiC gate turn-off thyristors. These devices demonstrate the feasibility of nonimplanted high-voltage SiC thyristors. The maximal measured forward breakdown voltage of 7.8 kV corresponds very well to the ideal value of 8.1 kV. This letter explains the conceptual procedure to realize an optimal four-step JTE and compares measurement results with those obtained from finite-element simulations.
Keywords
semiconductor device breakdown; silicon compounds; thyristors; wide band gap semiconductors; SiC; breakdown voltage; finite element simulation; gate turn-off thyristors; graded etched junction termination extension; high-voltage thyristors; voltage 7.8 kV; voltage 8.1 kV; Anodes; Current measurement; Etching; Logic gates; Silicon carbide; Thyristors; Uncertainty; Gate turn-off (GTO); ion implantation; reactive ion etching; silicon carbide (SiC); termination; thyristor;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2163055
Filename
6012510
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