Characteristics of Elliptical Gate-All-Around SONOS Nanowire With Effective Circular Radius

Author

Lee, Myoung-Sun ; Byung-Gook Park ; Il Hwan Cho ; Jong-Ho Lee

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea

Volume

33

Issue

11

fYear

2012

Firstpage

1613

Lastpage

1615

Abstract

Characteristics of cylindrical gate-all-around (GAA) SONOS nanowires with elliptical cross sections have been investigated. The mechanism of the program efficiency degradation for the elliptical GAA SONOS is analyzed by 3-D TCAD simulation depending on the geometry aspect ratios (ARs). Moreover, we proposed an effective circular radius (R_eff1) for the elliptical silicon body through a conformal mapping. The ID- V_GS curves of the elliptical and circular GAA SONOS devices with R_eff1 in initial state are almost consistent with each other for AR ≤ 2. However, their program properties differ in less than ~4.2% due to the localized charge-trapping effect in nitride layer of the elliptical geometry.

Keywords

flash memories; nanowires; 3D TCAD simulation; GAA SONOS nanowires; ID-V curves; charge trap flash memory devices; circular GAA SONOS devices; conformal mapping; effective circular radius; elliptical cross-sections; elliptical gate-all-around SONOS nanowire; elliptical geometry; elliptical silicon body; geometry aspect ratios; localized charge-trapping effect; Elliptic design; Geometry; Logic gates; Nanowires; SONOS devices; Silicon; Circular; SONOS; effective radius; elliptical; gate-all-around (GAA); nanowire;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2215303

Filename

6329928