Title :
Grafted GaAlAs rib waveguides on an InP substrate
Author :
Yi-Yan, A. ; Seto, Mae ; Gmitter, T.J. ; Hwang, D.M. ; Florez, L.T.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
Rib waveguides were fabricated on a 1.4 mu m thick GaAlAs epilayer granted on the surface of a semi-insulating InP substrate by epitaxial lift-off. Single-mode waveguides with propagation losses (<7 dB/cm) lower than heteroepitaxially grown counterparts have been achieved. TEM analysis on the GaAlAs/InP interface indicates surface scattering as one of the main loss mechanisms.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; optical waveguides; semiconductor junctions; substrates; 1.4 micron; GaAlAs-InP; InP substrate; TEM analysis; epitaxial lift-off; loss mechanisms; propagation losses; semi-insulating InP substrate; semiconductors; single mode waveguides; surface scattering;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901006
