Title :
1F ESD protection device for gigahertz high-frequency output ESD protection
Author :
Lee, Joun-Ho ; Huang, Shih-Chia ; Wu, Yung-Hsien ; Chen, Ke-Horng
Abstract :
A mutual-protection scheme is proposed to achieve an ultra-low capacitance electrostatic discharge (ESD) protection device. The ESD protection device can not only dissipate ESD current, but also can make the vulnerable output transistor have the ESD protection capability. Namely, the output transistor can also protect ICs and help the ESD protection device to share the ESD current. Using this scheme can discharge more ESD current than the summation current of the two individual devices. From the ESD test result, it can achieve the required ESD level by using the ultra-low capacitance ESD protection device (~1.2 fF).
Keywords :
1/f noise; capacitance; electrical safety; electrostatic discharge; transistors; ESD current; ESD protection capability; ESD test; gigahertz high-frequency output ESD protection device; mutual-protection scheme; output transistor; ultra-low capacitance; ultra-low capacitance electrostatic discharge protection device; vulnerable output transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.1904