• DocumentCode
    1316720
  • Title

    80 GHz 4:1 frequency divider IC using nonself-aligned InP/InGaAs heterostructure bipolar transistors

  • Author

    Nakajima, H. ; Sano, E. ; Ida, M. ; Yamahata, S.

  • Author_Institution
    NTT Photonics Labs., Kanagawa, Japan
  • Volume
    36
  • Issue
    1
  • fYear
    2000
  • fDate
    1/6/2000 12:00:00 AM
  • Firstpage
    34
  • Lastpage
    35
  • Abstract
    80 GHz operation has been attained for a divide-by-four frequency divider IC fabricated with non-self-aligned InP/InGaAs heterostructure bipolar transistors. To the authors´ knowledge, this is the fastest digital frequency divider IC reported to date. The measured maximum toggle frequency of 80 GHz was the upper limit of the measurement setup
  • Keywords
    III-V semiconductors; bipolar logic circuits; frequency dividers; gallium arsenide; high-speed integrated circuits; indium compounds; integrated circuit measurement; 80 GHz; III-V semiconductors; InP-InGaAs; digital frequency divider; divide-by-four frequency divider IC; maximum toggle frequency; measurement setup; nonself-aligned heterostructure bipolar transistors; upper limit;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000111
  • Filename
    830500
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1316720