Title :
Ultra-low power source coupled FET logic gate configuration in GaAs MESFET technology
Author :
Bushehri, E. ; Bratov, V. ; Starosselski, V. ; Schlichter, T. ; Milenkovic, S. ; Timochenkov, V.
Author_Institution :
Microelectron. Centre, Middlesex Univ., London, UK
fDate :
1/6/2000 12:00:00 AM
Abstract :
A source coupled FET logic gate configuration is proposed for achieving high speed and low power dissipation. A frequency of 2.4 GHz has been achieved, based on measurements on a divide-by-20 frequency divider, dissipating only 12 mW from a single 2 V power supply. The performance of the gate in terms of speed is comparable to that of the previously reported high speed source coupled FET logic while dissipating a fraction of the power
Keywords :
III-V semiconductors; MESFET integrated circuits; field effect logic circuits; frequency dividers; gallium arsenide; high-speed integrated circuits; logic gates; low-power electronics; 12 mW; 2 V; 2.4 GHz; GaAs; III-V semiconductors; MESFET technology; divide-by-20 frequency divider; gate speed; high speed ICs; power dissipation; source coupled FET logic gate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000016
