Title :
Buried-heterostructure long-wavelength vertical-cavity surface-emitting lasers with InGaAsP/InP-GaAs/AlAs DBRs
Author :
Ohiso, Y. ; Iga, R. ; Kishi, K. ; Amano, C.
Author_Institution :
NTT Photonics Lab., Kanagawa, Japan
fDate :
1/6/2000 12:00:00 AM
Abstract :
Thin-film wafer fusion has been used to fabricate 1.55 μm buried-heterostructure long-wavelength vertical-cavity surface-emitting laser (LW-VCSELs) with InGaAsP/InP-GaAs/AlAs distributed Bragg reflectors. Room-temperature continuous-wave operation of the LW-VCSELs has been achieved with a threshold current of 2.1 mA at 25°C
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical fabrication; semiconductor lasers; surface emitting lasers; 1.55 mum; 2.1 mA; 298 K; InGaAsP-InP-GaAs-AlAs; InGaAsP/InP-GaAs/AlAs; InGaAsP/InP-GaAs/AlAs DBRs; buried-heterostructure long-wavelength vertical-cavity surface-emitting laser; distributed Bragg reflectors; room-temperature continuous-wave operation; thin-film wafer fusion; threshold current; vertical-cavity surface-emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000055
