DocumentCode :
1316763
Title :
Ultra-low threshold current density ZnCdSe SQW laser fabricated by implantation induced disordering
Author :
Strassburg, Martin ; Schulz, O. ; Pohl, U.W. ; Bimberg, D. ; Itoh, S. ; Nakano, K. ; Ishibashi, A.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Volume :
36
Issue :
1
fYear :
2000
fDate :
1/6/2000 12:00:00 AM
Firstpage :
44
Lastpage :
45
Abstract :
Implantation-induced disordering is applied to define laterally structured waveguiding in ZnCdSe single quantum well lasers. Owing to the intermixing-induced lateral step of the refractive index, the emission characteristics are significantly improved. A reduction in the threshold current density from 276 to 96 A/cm2 is achieved
Keywords :
zinc compounds; SQW laser; ZnCdSe; ZnCdSe laser; emission characteristics; fabrication; implantation induced disordering; intermixing-induced lateral step; laterally structured waveguiding; refractive index; single quantum well lasers; threshold current density; ultra-low threshold current density;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000128
Filename :
830507
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1316763
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