Title :
30 Gbit/s, 850 nm, VCSEL-based optical link
Author :
Schow, C.L. ; Rylyakov, A.V.
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A complete 30 Gbit/s VCSEL link is reported. The driver and receiver amplifiers were fabricated in a 0.13 m SiGe BiCMOS process and the 850 nm VCSELs and photodetectors are commercial 10 Gbit/s-class components. Transmitter pre-emphasis applied through the feed-forward equaliser circuit enables the full link to operate at 30 Gbit/s at a bit error ratio less than 10-12 with a 9 dB link budget.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; error statistics; feedforward amplifiers; laser cavity resonators; optical links; optical receivers; optical transmitters; photodetectors; semiconductor lasers; surface emitting lasers; BiCMOS process; SiGe; VCSEL-based optical link; bit error ratio; bit rate 10 Gbit/s; bit rate 30 Gbit/s; driver amplifiers; feedforward equaliser circuit; link budget; photodetectors; receiver amplifiers; size 1.3 mum; transmitter pre-emphasis; wavelength 850 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.2239
