Title :
Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors
Author :
Hasnain, G. ; Tai, K. ; Wynn, J.D. ; Wang, Y.H. ; Fischer, R.J. ; Hong, M. ; Wier, B.E. ; Zydzik, G.J. ; Mannaerts, J.P. ; Gamelin, J. ; Cho, A.Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Continuous wave lasing at room temperature of vertical cavity top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors is demonstrated. Semitransparent metal films, about 350 AA thick, are used with a reduced number of periods of distributed Bragg reflectors to form a hybrid top mirror with greatly reduced electrical resistance. Voltage at a threshold current of 11 mA is as low as 3.2 V and 100 Omega differential series resistance is obtained with 10 mu m diameter devices. Improved uniformity and yield were obtained using silver/gold thin films deposited in-situ under ultra-high vacuum after molecular beam epitaxial growth of the semiconductor layers.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gradient index optics; semiconductor junction lasers; 100 ohm; 11 mA; 3.2 V; Ag-Au thin films; GRINSCH region; GaAs-AlGaAs quantum wells; GaAs-InGaAs strained quantum wells; continuous wave lasing; differential series resistance; distributed Bragg reflectors; electrical resistance; hybrid metal-semiconductor reflectors; hybrid metal/semiconductor reflectors; hybrid top mirror; molecular beam epitaxial growth; semiconductor layers; semitransparent metal film; threshold current; ultra-high vacuum deposition; vertical cavity top surface emitting quantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901019
