Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors

Author

Hasnain, G. ; Tai, K. ; Wynn, J.D. ; Wang, Y.H. ; Fischer, R.J. ; Hong, M. ; Wier, B.E. ; Zydzik, G.J. ; Mannaerts, J.P. ; Gamelin, J. ; Cho, A.Y.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

26

Issue

19

fYear

1990

Firstpage

1590

Lastpage

1592

Abstract

Continuous wave lasing at room temperature of vertical cavity top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors is demonstrated. Semitransparent metal films, about 350 AA thick, are used with a reduced number of periods of distributed Bragg reflectors to form a hybrid top mirror with greatly reduced electrical resistance. Voltage at a threshold current of 11 mA is as low as 3.2 V and 100 Omega differential series resistance is obtained with 10 mu m diameter devices. Improved uniformity and yield were obtained using silver/gold thin films deposited in-situ under ultra-high vacuum after molecular beam epitaxial growth of the semiconductor layers.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gradient index optics; semiconductor junction lasers; 100 ohm; 11 mA; 3.2 V; Ag-Au thin films; GRINSCH region; GaAs-AlGaAs quantum wells; GaAs-InGaAs strained quantum wells; continuous wave lasing; differential series resistance; distributed Bragg reflectors; electrical resistance; hybrid metal-semiconductor reflectors; hybrid metal/semiconductor reflectors; hybrid top mirror; molecular beam epitaxial growth; semiconductor layers; semitransparent metal film; threshold current; ultra-high vacuum deposition; vertical cavity top surface emitting quantum well lasers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19901019

Filename

83052