DocumentCode
1316892
Title
Defect modelling and testability analysis of BiCMOS circuits
Author
Stewart, B.E. ; Al-Khalili, D. ; Rozon, Come
Author_Institution
Dept. of Electr. & Comput. Eng., R. Mil. Coll. of Canada, Kingston, Ont., Canada
Volume
16
Issue
4
fYear
1991
Firstpage
148
Lastpage
153
Abstract
BiCMOS is a recent integrated circuit technology that is rapidly becoming a mainstream technology supporting high-speed applications. Highly complex circuits are now realizable with such a technology, which merges bipolar and MOS devices on a single substrate. The fabrication process involves a mix of bipolar and MOS devices. These circuits must be tested to ensure that they have been processed correctly. The authors address the testability of BiCMOS circuits compared to equivalent CMOS circuits. Defects are modelled and their impacts on the behaviour of the circuits are analyzed by simulation. Faults are classified as logical faults or performance degradation faults. It is determined that BiCMOS gates are more difficult to test that the corresponding CMOS gates. Adequate fault models must therefore be constructed to improve the testability of BiCMOS circuits.
Keywords
BIMOS integrated circuits; integrated circuit testing; logic testing; BiCMOS circuits; MOS devices; complex circuits; defect modelling; equivalent CMOS circuits; fabrication process; fault models; gate testing; integrated circuit technology; logical faults; performance degradation faults; single substrate; testability analysis; BiCMOS integrated circuits; CMOS integrated circuits; Circuit faults; Fabrication; Integrated circuit modeling; Logic gates; Semiconductor device modeling;
fLanguage
English
Journal_Title
Electrical and Computer Engineering, Canadian Journal of
Publisher
ieee
ISSN
0840-8688
Type
jour
DOI
10.1109/CJECE.1991.6591704
Filename
6591704
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