• DocumentCode
    1316892
  • Title

    Defect modelling and testability analysis of BiCMOS circuits

  • Author

    Stewart, B.E. ; Al-Khalili, D. ; Rozon, Come

  • Author_Institution
    Dept. of Electr. & Comput. Eng., R. Mil. Coll. of Canada, Kingston, Ont., Canada
  • Volume
    16
  • Issue
    4
  • fYear
    1991
  • Firstpage
    148
  • Lastpage
    153
  • Abstract
    BiCMOS is a recent integrated circuit technology that is rapidly becoming a mainstream technology supporting high-speed applications. Highly complex circuits are now realizable with such a technology, which merges bipolar and MOS devices on a single substrate. The fabrication process involves a mix of bipolar and MOS devices. These circuits must be tested to ensure that they have been processed correctly. The authors address the testability of BiCMOS circuits compared to equivalent CMOS circuits. Defects are modelled and their impacts on the behaviour of the circuits are analyzed by simulation. Faults are classified as logical faults or performance degradation faults. It is determined that BiCMOS gates are more difficult to test that the corresponding CMOS gates. Adequate fault models must therefore be constructed to improve the testability of BiCMOS circuits.
  • Keywords
    BIMOS integrated circuits; integrated circuit testing; logic testing; BiCMOS circuits; MOS devices; complex circuits; defect modelling; equivalent CMOS circuits; fabrication process; fault models; gate testing; integrated circuit technology; logical faults; performance degradation faults; single substrate; testability analysis; BiCMOS integrated circuits; CMOS integrated circuits; Circuit faults; Fabrication; Integrated circuit modeling; Logic gates; Semiconductor device modeling;
  • fLanguage
    English
  • Journal_Title
    Electrical and Computer Engineering, Canadian Journal of
  • Publisher
    ieee
  • ISSN
    0840-8688
  • Type

    jour

  • DOI
    10.1109/CJECE.1991.6591704
  • Filename
    6591704