Title :
AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition
Author :
Shelton, B.S. ; Huang, J.J. ; Lambert, D.J.H. ; Zhu, T.G. ; Wong, M.M. ; Eiting, C.J. ; Kwon, H.K. ; Feng, M. ; Dupuis, R.D.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
1/6/2000 12:00:00 AM
Abstract :
Heterojunction bipolar transistors based on aluminium gallium nitride/gallium nitride (AlGaN/GaN) structures have been fabricated and characterised. The devices were grown by metal organic chemical vapour deposition on c-plane sapphire substrates. The Npn structure consists of an n-GaN layer followed by an n+-GaN subcollector contact, an unintentionally doped GaN collector, p-GaN base, and an N-Al0.1 G0.9N emitter with n+-GaN contact. Devices yielded good transistor performance with a DC current gain as high as 100 at room temperature
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; heterojunction bipolar transistors; semiconductor device measurement; semiconductor growth; wide band gap semiconductors; Al2O3; AlGaN/GaN heterojunction bipolar transistors; DC current gain; GaN-Al0.1Ga0.9N; Gummel plot; N-Al0.1G0.9N emitter; Npn structure; base-collector junction; base-emitter junction; c-plane sapphire substrates; metal organic chemical vapour deposition; n-GaN layer; n+-GaN contact; n+-GaN subcollector contact; p-GaN base; room temperature; transistor performance; unintentionally doped GaN collector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000053
