Title :
DC characteristics of MOVPE-grown Npn InGaP/InGaAsN DHBTs
Author :
Li, N.Y. ; Chang, P.C. ; Baca, A.G. ; Xie, X.M. ; Sharps, P.R. ; Hou, H.Q.
Author_Institution :
Emcore Photovoltaics, Emcore Corp., Albuquerque, NM, USA
fDate :
1/6/2000 12:00:00 AM
Abstract :
The authors have demonstrated, for the first time, a functional Npn double heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2 eV as the p-type base layer. A 300 Å thick InxGa1-xAs graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 μm2, a peak current gain of 5.3 has been achieved
Keywords :
III-V semiconductors; MOCVD; energy gap; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; low-power electronics; semiconductor device measurement; semiconductor growth; 1.2 eV; DC characteristics; Gummel plot; InxGa1-xAs graded layer; InGaAs; InGaP-InGaAsN; MOVPE growth; Npn InGaP/InGaAsN DHBTs; bandgap energy; conduction band offset; emitter size; functional Npn double heterojunction bipolar transistor; ideality factors; low power electronics; n-type GaAs collector junction; p-type base layer; peak current gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000024
