Author :
Marinelli, C. ; Khrushchev, I.Y. ; Rorison, J.M. ; Penty, R.V. ; White, I.H. ; Kaneko, Y. ; Watanabe, S. ; Yamada, N. ; Takeuchi, T. ; Amano, Hideharu ; Akasaki, I. ; Hasnain, G. ; Schneider, R. ; Wang, S.Y. ; Tan, M.R.T.
Abstract :
An investigation into the emission and degradation characteristics of GaInN multiquantum well lasers driven by short, high current pulses for both the time and spectral domains is presented. Sub-nanosecond optical pulses with peak powers exceeding 450 mW and gain-switched pulses shorter than 50 ps have been generated
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical pulse generation; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; 100 mW; 350 pJ; 450 mW; 50 ps; GaInN; GaInN multiquantum well laser diodes; degradation characteristics; emission characteristics; gain-switched pulses; gain-switching; peak power; short high current pulses; spectral domain; sub-nanosecond optical pulse generation; time domain;
