Title :
Improvement of β-SiC/Si pn diode high temperature characteristics with porous silicon layer
Author :
Hsieh, Wen-Tse ; Fang, Yean-Kuen ; Lee, W.J. ; Ho, Chi-Wei ; Wu, Kuen-Hsien ; Ho, Jyh-Jier ; Hwang, Jun-Dar
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
1/6/2000 12:00:00 AM
Abstract :
It is demonstrated experimentally that the β-SiC/Si pn diode high temperature characteristics can be improved by adding a porous silicon layer on the interface of β-SiC/Si. The reverse breakdown voltage can be increased from 3 to 16 V at room temperature and from 2 to 11 V at 100°C and the rectifying characteristic of the pn diode was extended from 125 to 200°C. The significant improvement is attributed to the suppression of the leakage current due to the inherent high resistivity and the flexibility of the porous silicon material
Keywords :
anodisation; high-temperature electronics; leakage currents; porous semiconductors; rectification; semiconductor device breakdown; semiconductor diodes; silicon; silicon compounds; wide band gap semiconductors; β-SiC/Si pn diode; 11 V; 16 V; 25 to 200 C; SiC-Si; electrochemical anodisation; high resistivity; high temperature characteristics improvement; leakage current suppression; material flexibility; porous Si layer; rectifying characteristic; reverse breakdown voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000019
