DocumentCode :
1316967
Title :
High-performance algorithmic switched-current memory cell
Author :
Toumazou, Christofer ; Battersby, N.C. ; Maglaras, C.
Author_Institution :
Dept. of Electr. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
Volume :
26
Issue :
19
fYear :
1990
Firstpage :
1593
Lastpage :
1595
Abstract :
A new high-performance algorithmic switched-current memory cell with greatly improved charge injection performance is described. The new cell uses algorithmic means to achieve an improvement in charge injection of two orders of magnitude and does not rely on matching.
Keywords :
CMOS integrated circuits; circuit analysis computing; integrated memory circuits; CMOS process; HSPICE; charge injection performance; computer simulation; high-performance algorithmic switched-current memory cell; semiconductor storage;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19901021
Filename :
83054
Link To Document :
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