DocumentCode :
1316985
Title :
Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices
Author :
Zhou, L. ; Ping, A.T. ; Khan, F. ; Osinsky, A. ; Adesida, I.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Volume :
36
Issue :
1
fYear :
2000
fDate :
1/6/2000 12:00:00 AM
Firstpage :
91
Lastpage :
93
Abstract :
The electrical characteristics of Ti/Pt/Au contacts on p-type GaN/ AlxGa1-xN (x=0.10 and 0.20) superlattices (SL) have been investigated. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is demonstrated to be an effective ohmic metallisation scheme for GaN/AlxGa1-x N superlattices. A low specific contact resistance of 4.6×10 -4 Ωcm2 is reported for unalloyed Ti/Pt/Au on an GaN/Al0.2Ga0.8N SL
Keywords :
III-V semiconductors; aluminium compounds; contact resistance; gallium compounds; gold; ohmic contacts; platinum; semiconductor device metallisation; semiconductor superlattices; titanium; wide band gap semiconductors; GaN-Al0.1Ga0.9N; GaN-Al0.2Ga0.8N; Ti-Pt-Au; Ti/Pt/Au ohmic contacts; current-voltage characteristics; enhanced p-type doping; ohmic metallisation scheme; p-type GaN/AlxGa1-xN superlattices; specific contact resistance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000028
Filename :
830542
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1316985
بازگشت