Title :
Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage
Author :
Chang, Chao-Tsun ; Hsu, T.-H. ; Chang, Edward Yi ; Chen, Yen-Chi ; Trinh, H.-D. ; Chen, Kevin J.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
9/1/2010 12:00:00 AM
Abstract :
Normally-off operation AlGaN/GaN high electron mobility transistors have been developed utilising a fluorine-based treatment technique combined with a metal-oxide-semiconductor gate architecture. Threshold voltage as high as 5.1 V was achieved by using an 16 nm-thick Al2O3 gate oxide film. Additionally, the device performed a drain current density of 500 mA/mm and a peak transconductance of 100 mS/mm, which are comparable to the conventional normally-on devices.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; Al2O3; AlGaN-GaN; fluorine-based treatment technique; high electron mobility transistors; metal-oxide-semiconductor gate architecture; normally-off operation MOS-HEMT; size 16 nm; voltage 5.1 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.1939
