Title :
Room temperature vertical cavity GaAs/AlGaAs surface emitting injection laser
Author :
Wuthrich, C. ; James, J.H. ; Ganiere, J.D. ; Reinhart, F.K.
Author_Institution :
Inst. of Micro & Opt., Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland
Abstract :
A vertical cavity GaAs/AlGaAs top surface emitting injection laser (SEIL) has been fabricated using a simple planar technology. The laser has a low series resistance (40 Omega ) and works at room temperature in pulsed operation with a duty cycle up to 35% and a threshold current of 55 mA. The authors obtained monomode operation at 896 nm wavelength, with a linewidth less than 1.5 AA. Both single SEILs and two dimensional SEIL arrays has been fabricated.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; semiconductor junction lasers; 40 ohm; 55 mA; 896 nm; Fabry Perot cavity; GaAs-AlGaAs surface emitting injection laser; duty cycle; linewidth; planar technology; pulsed operation; room temperature vertical cavity laser; semiconductor lasers; series resistance; threshold current; two dimensional SEIL arrays;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901025
