Title :
90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8 mu m diameter core silica fibre
Author :
Tai, K. ; Hasnain, G. ; Wynn, J.D. ; Fischer, R.J. ; Wang, Y.H. ; Weir, B. ; Gamelin, J. ; Cho, A.Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Top surface emitting GaAs/AlGaAs quantum well lasers were fabricated to exhibit stable single longitudinal and two-dimensional Gaussian-like transverse mode emission characteristics under room temperature continuous wave operation with threshold currents of less than 3 mA. Efficient coupling of laser outputs to 8 mu m diameter core silica fibres was achieved through butt-coupling with coupling coefficients of 90% and 50% for fibres with etched lens-like end and flat cleaved end, respectively.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; optical couplers; optical fibres; semiconductor junction lasers; semiconductor quantum wells; 3 mA; 50 percent; 8 micron; 90 percent; GaAs-AlGaAs; SiO 2 fibre; butt-coupling; continuous wave operation; coupling coefficients; coupling efficiency; etched lens-like end; flat cleaved end; laser fibre coupling; quantum well laser; room temperature; semiconductors; silica fibres; stable single longitudinal; threshold currents; top surface emitting lasers; vertical cavity lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901043
