Title :
Modelling of electron mobility in silicon MOS inversion and accumulation layers at liquid helium temperature
Author :
Hafez, I.M. ; Emrani, A. ; Ghibaudo, G. ; Balestra, F.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
A study of the effective mobility in silicon MOS inversion and accumulation layers at liquid helium temperature is reported. It is demonstrated, using MOS devices of various technologies, that the effective mobility, mu eff, at liquid helium temperature can be represented by a bell-shaped function of the inversion (or accumulation) charge Qn.
Keywords :
carrier mobility; cryogenics; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; 4.2 K; MOS accumulation layer; MOS devices; MOS inversion layer; Si; electron mobility; liquid He temperature; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901047
