• DocumentCode
    1317236
  • Title

    Barrier height enhancement of InP Schottky junctions by treatment with photo-decomposed PH3

  • Author

    Sugino, Takushi ; Ito, H. ; Shirafuji, J.

  • Author_Institution
    Dept. of Electr. Eng., Osaka Univ., Japan
  • Volume
    26
  • Issue
    21
  • fYear
    1990
  • Firstpage
    1750
  • Lastpage
    1751
  • Abstract
    Au-InP Schottky junctions are formed on a surface treated by ArF excimer laser photolytic process of phosphine (PH3) gas. The Schottky junction has a metal-insulator-semiconductor (MIS) structure because of the existence of a thin P layer deposited on the InP surface. The barrier height increases to 0.65 eV and the reverse current is reduced by more than two orders of magnitude compared with the case of Schottky junctions without photolytic treatment. The Richardson constant of the novel Schottky junction is evaluated as 0.126 A cm-2 K-2 from the temperature dependence of the saturation current.
  • Keywords
    III-V semiconductors; Schottky effect; gold; indium compounds; metal-insulator-semiconductor structures; phosphorus compounds; photolysis; semiconductor-metal boundaries; surface treatment; ArF; ArF excimer laser photolytic process; Au-InP; InP surface; MIS; PH 3; Richardson constant; Schottky junction; Schottky junctions; barrier height; photo-decomposed PH 3; photolytic treatment; reverse current; saturation current; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901124
  • Filename
    83091
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1317236