• DocumentCode
    1317245
  • Title

    Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy

  • Author

    Alexandre, F. ; Benchimol, J.L. ; Dangla, J. ; Dubon-Chevallier, C. ; Amarger, V.

  • Author_Institution
    CNET, Lab. de Bagneux, France
  • Volume
    26
  • Issue
    21
  • fYear
    1990
  • Firstpage
    1753
  • Lastpage
    1755
  • Abstract
    The first demonstration of a GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy is reported. A common-emitter current gain of 30 at a current density of 110 A/cm2 is obtained for a beryllium base doping as high as 8*1019 cm-3. The base sheet resistance of 140 Omega / Square Operator is among the lowest reported values.
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor growth; GaAs substrate; GaAs:Be; GaInP-GaAs; base sheet resistance; chemical beam epitaxy; common-emitter current gain; current density; heavily doped base; heterojunction bipolar transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901126
  • Filename
    83093
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1317245