Title :
Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy
Author :
Alexandre, F. ; Benchimol, J.L. ; Dangla, J. ; Dubon-Chevallier, C. ; Amarger, V.
Author_Institution :
CNET, Lab. de Bagneux, France
Abstract :
The first demonstration of a GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy is reported. A common-emitter current gain of 30 at a current density of 110 A/cm2 is obtained for a beryllium base doping as high as 8*1019 cm-3. The base sheet resistance of 140 Omega / Square Operator is among the lowest reported values.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor growth; GaAs substrate; GaAs:Be; GaInP-GaAs; base sheet resistance; chemical beam epitaxy; common-emitter current gain; current density; heavily doped base; heterojunction bipolar transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901126
