• DocumentCode
    1317251
  • Title

    High power operation of GaInAsP/GaInAs MQW ridge lasers emitting at 1.48 mu m

  • Author

    Glew, R.W. ; Greene, P.D. ; Henshall, G.D. ; Whiteaway, J.E.A.

  • Volume
    26
  • Issue
    21
  • fYear
    1990
  • Firstpage
    1755
  • Lastpage
    1756
  • Abstract
    Multi-quantum-well (MQW) ridge lasers have been produced with CW light outputs in excess of 100 mW at 500 mA. The wavelength of operation is 1480 nm and the lasers are suitable for pumping erbium-doped-fibre amplifiers. These are the highest power ridge lasers yet produced in the 1500 nm wavelength region.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical waveguides; semiconductor junction lasers; 100 mW; 1480 nm; 500 mA; CW light outputs; CW output power; GaInAsP-GaInAs; MQW ridge lasers; erbium-doped-fibre amplifiers; high power operation; operation wavelength; ridge waveguide lasers; wavelength region;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901127
  • Filename
    83094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1317251