DocumentCode :
1317353
Title :
Preparation and Characterizations of the High UV Sensitivity Porous Diamond-Like Carbon Thin Film MSM Photodiodes
Author :
Juang, Feng-Renn ; Fang, Yean-Kuen ; Ho, Hung-Cheng
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
12
Issue :
5
fYear :
2012
fDate :
5/1/2012 12:00:00 AM
Firstpage :
978
Lastpage :
983
Abstract :
For the first time, we use a porous diamond-like carbon (DLC) film formed on a porous Si substrate to promote its ultraviolet (UV) quantum efficiency. With the porous DLC films, we developed metal-semiconductor-metal (MSM) photodiodes for UV detecting applications. The morphology and structure of the porous DLC film were analyzed with SEM photos for both top and cross section views. Besides, we examined the responses of the diodes to UV light by measurement of the photo/dark current ratio with and without the irradiation of a 366 nm UV light. Experiments show the current ratio and quantum efficiency are respectively promoted ~570% and ~76% under -15 V bias by the porous structure.
Keywords :
dark conductivity; diamond-like carbon; metal-semiconductor-metal structures; photoconductivity; photodiodes; porous materials; scanning electron microscopy; thin film devices; ultraviolet radiation effects; C; SEM photos; Si; UV detecting applications; UV light irradiation; dark current; high UV sensitivity porous diamond-like carbon thin film MSM photodiodes; metal-semiconductor-metal photodiodes; photocurrent; porous DLC films; porous Si substrate; porous structure; ultraviolet quantum efficiency; wavelength 366 nm; Diamond-like carbon; Etching; Films; Ions; Plasma temperature; Silicon; Substrates; DLC; MSM; UV light; porous structure; quantum efficiency;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2011.2167320
Filename :
6015520
Link To Document :
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