Title :
Gate length scaling in high performance InGaP/InGaAs/GaAs pHEMTs
Author :
Fay, P. ; Stevens, K. ; Elliot, J. ; Pan, N.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
fDate :
4/1/2000 12:00:00 AM
Abstract :
The performance of InGaP-based pHEMTs as a function of gate length has been examined experimentally. The direct-current and microwave performance of pHEMTs with gate lengths ranging from 1.0-0.2 μm has been evaluated. Extrinsic transconductances from 341 mS/mm for 1.0 μm gate lengths to 456 mS/mm for 0.5 μm gate lengths were obtained. High-speed device operation has been verified, with fT of 93 GHz and fmax of 130 GHz for 0.2 μm gate lengths. The dependence of DC and small-signal device parameters on gate length has been examined, and scaling effects in InGaP-based pHEMT´s are examined and compared to those for AlGaAs/InGaAs/GaAs pHEMTs. High-field transport in InGaP/InGaAs heterostructures is found to be similar to that of AlGaAs/InGaAs heterostructures. The lower /spl epsiv//sub r/ of InGaP relative to AlGaAs is shown to be responsible for the early onset of short-channel effects in InGaP-based devices.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; 0.1 to 0.5 micron; 130 GHz; 341 to 456 mS/mm; 93 GHz; DC parameters; DC performance; InGaP-InGaAs-GaAs; InGaP-based devices; InGaP/InGaAs heterostructures; MODFET; PHEMT performance; extrinsic transconductances; gate length scaling; high performance PHEMT; high-field transport; high-speed device operation; microwave performance; pseudomorphic HEMT; scaling effects; short-channel effects; small-signal device parameters; Electrical resistance measurement; Fabrication; Gallium arsenide; Gold; HEMTs; Indium gallium arsenide; Lithography; MODFETs; PHEMTs; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
