Title :
Manufacturable GaAs VFET for power switching applications
Author :
Eisenbeiser, K. ; Jenn-Hwa Huang ; Salih, A. ; Hadizad, P. ; Pitts, B.
Author_Institution :
Lab. of Phys. Sci. Res., Motorola Lab., Tempe, AZ, USA
fDate :
4/1/2000 12:00:00 AM
Abstract :
We have developed a manufacturable process to fabricate high performance GaAs vertical field effect transistors (VFET´s). Our process uses ion implantation to form the gate as opposed to previous VFET processes, which used epitaxial regrowth or angled evaporation. In this process, trenches 1.2 μm wide by 0.6 μm deep with a period of 2.4 μm are formed by reactive ion etch (RIE) then the gate region is formed at the bottom of the trench by Ar/C ion co-implantation. Current handling capability of these devices exceeds 200 A/cm2 with a specific on-resistance of 0.25 m/spl Omega/-cm2 and calculated delay times of 13.9 ps.
Keywords :
III-V semiconductors; field effect transistor switches; gallium arsenide; ion implantation; junction gate field effect transistors; power field effect transistors; power semiconductor switches; semiconductor device manufacture; sputter etching; 0.6 micron; 1.2 micron; 13.9 ps; Ar/C ion co-implantation; GaAs VFET; GaAs:Ar,C; RIE; gate formation; ion implantation; manufacturable process; power switching applications; reactive ion etch; vertical field effect transistors; Argon; Costs; Epitaxial growth; Etching; FETs; Gallium arsenide; Laboratories; Manufacturing; Resists; Switches;
Journal_Title :
Electron Device Letters, IEEE
