Title :
Transistor off-state leakage current induced by TiSi2 pre-amorphizing implant in a 0.20 μm CMOS process
Author :
Lutze, Jeffrey ; Scott, Greg ; Manley, Martin
Author_Institution :
Technol. Dev. Group, Philips Semicond., San Jose, CA, USA
fDate :
4/1/2000 12:00:00 AM
Abstract :
We report on an anomalous off-state leakage current found in NMOS devices fabricated with a pre-amorphizing (PA) implant before titanium silicide formation. We present data which indicates that the leakage current is caused by channeling of the arsenic PA implant through the polysilicon gate. An angled PA implant is shown to prevent the channeling and allow the fabrication of well-behaved devices with low resistance titanium silicide.
Keywords :
CMOS integrated circuits; integrated circuit metallisation; ion implantation; leakage currents; titanium compounds; 0.2 micron; As implant; NMOS devices; TiSi/sub 2/ pre-amorphizing implant; TiSi/sub 2/-Si:As; angled implant; anomalous leakage current; channeling prevention; device fabrication; low resistance titanium silicide; polysilicon gate; submicron CMOS process; transistor offstate leakage current; CMOS process; CMOS technology; Fabrication; Implants; Leakage current; MOS devices; Robustness; Scattering; Silicides; Titanium;
Journal_Title :
Electron Device Letters, IEEE
