DocumentCode :
1317429
Title :
Fabrication and testing of surface micromachined polycrystalline SiC micromotors
Author :
Yasseen, A. Azzam ; Wu, Chien Hung ; Zorman, Christian A. ; Mehregany, Mehran
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
Volume :
21
Issue :
4
fYear :
2000
fDate :
4/1/2000 12:00:00 AM
Firstpage :
164
Lastpage :
166
Abstract :
The authors present the fabrication and testing of surface micromachined polycrystalline silicon carbide micromotors. A new multilayer fabrication process utilizing low temperature deposition and micromolding techniques was developed to create the desired SiC structural components. Typical operating voltages of salient-pole and wobble micromotors in room air were 100 and 80 V, respectively. Wobble micromotors were tested at room temperature in atmospheres of argon, nitrogen, oxygen, and room air (25% humidity). The gear ratio as a function of applied voltage was higher for operation in room air as compared with the other gases, suggesting a relationship between gear ratio and relative humidity. In addition, micromotors were tested at elevated temperatures and exhibited stable operation up to 500/spl deg/C.
Keywords :
humidity; machine testing; micromachining; micromotors; silicon compounds; stability; wide band gap semiconductors; 100 V; 20 to 500 C; 80 V; Ar; N/sub 2/; O/sub 2/; SiC; applied voltage; elevated temperatures; gear ratio; harsh environments; low temperature deposition; micromolding techniques; micromotor fabrication; micromotor testing; multilayer fabrication process; polycrystalline SiC micromotors; relative humidity; salient-pole micromotors; stable operation; surface micromachined micromotors; wobble micromotors; Atmosphere; Fabrication; Gears; Humidity; Micromotors; Nonhomogeneous media; Silicon carbide; Temperature; Testing; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.830969
Filename :
830969
Link To Document :
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