Title :
Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks
Author :
Wang, Zhigang ; Parker, Chris G. ; Hodge, Dexter W. ; Croswell, Robert T. ; Yang, Nian ; Misra, Veena ; Hauser, John R.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
4/1/2000 12:00:00 AM
Abstract :
In this work, we demonstrate that the magnitude of flatband voltage (V/sub FB/) shift for ultrathin (<2 nm) silicon dioxide-silicon nitride (ON) gate stacks in MOSFET´s depends on the Fermi level position in the gate material. In addition, a fixed positive charge at the oxide-nitride interface was observed.
Keywords :
Fermi level; MOSFET; dielectric thin films; 2 nm; Fermi level position; SiO/sub 2/-Si/sub 3/N/sub 4/; fixed positive charge; flatband voltage shift; gate material; oxide-nitride interface; polysilicon gate type; ultrathin oxide-nitride gate stacks; Annealing; Boron; CMOS technology; Dielectric materials; Furnaces; MOSFET circuits; Permittivity; Plasma sources; Silicon; Voltage;
Journal_Title :
Electron Device Letters, IEEE
