DocumentCode
1317461
Title
Graded gate VDMOSFET
Author
Xu, Shuming ; Kian Paau Can ; Foo, Pang Dow ; Su, Yi ; Liu, Yong
Author_Institution
Inst. of Microelectron., Singapore
Volume
21
Issue
4
fYear
2000
fDate
4/1/2000 12:00:00 AM
Firstpage
176
Lastpage
178
Abstract
In this work, we present a novel RF VDMOSFET with graded gate structure. It can be fabricated by regrowing gate oxide after gate patterning. This structure enables a very thin gate oxide to be used in the channel region; thus a much high transconductance can be obtained. At the gate edges, the gate oxide thickness increases smoothly to about three times that of the channel region. This releases the electric field crowding at the gate edge, improving the breakdown voltage from 24 V to 68 V.
Keywords
MOSFET; UHF field effect transistors; semiconductor device breakdown; 350 to 1000 A; 68 V; RF VDMOSFET; breakdown voltage improvement; channel region; electric field crowding; gate edge; gate oxide regrowth; gate patterning; graded gate VDMOSFET; thin gate oxide; transconductance; Breakdown voltage; Capacitance; Degradation; Fabrication; Frequency; Gallium nitride; Hafnium; Low voltage; Manufacturing; Transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.830973
Filename
830973
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